Hunan Electric Power ›› 2023, Vol. 43 ›› Issue (1): 110-115.doi: 10.3969/j.issn.1008-0198.2023.01.019

• Experience and Discussion • Previous Articles     Next Articles

Research on Stator Bar End Electromagnetic Shielding for Pumped Storage Generator

NIE Liangliang1, TAO Shidi1, LI Tianwei2, LIU Lei2, LI Bin2, WANG Qi3   

  1. 1. China Southern Power Grid Power Generation Co., Ltd., Maintenance and Test Branch, Guangzhou 511493,China;
    2. China Southern Power Grid Electric Power Research Institute, CSG, Guangzhou 510663,China;
    3. Altair Engineering Software (Shanghai) Co., Ltd.,Shanghai 200070,China
  • Online:2023-02-25 Published:2023-03-03

Abstract: Based on the analysis of the transient electromagnetic field for the electromagnetic shielding of generator stator bar, the model boundary is selected in theory, which can take into account both the calculation speed and the calculation precision. The calculation models of two wire rods in the same slot and multiple wire rods in different slots are established to calculate the influence of adjacent wire rods on the electric field distribution. At the same time, the three-dimensional calculation model of a single bar is established to calculate and analyze the distribution characteristics of the axial and normal field intensity of the bar. The results show that the surface potential of the end of the bar after leaving the notch is close to the phase potential, and the maximum field strength appears at the lap of the high and low stopbands. In order to improve the distribution of field strength and potential, this paper puts forward measures to improve the distribution of field strength on the surface, adding high-resistance materials to the original high-low resistance overlap layer to keep the same as the original design scheme, while the original high-resistance layer is coated with low-resistance materials, which can greatly suppress the field strength and potential at the end of the wire rod.

Key words: pumped storage generator, stator bar end, electromagnetic shielding, non-linear semiconductor

CLC Number: