Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL

doi:10.3969/j.issn.1008-0198.2022.05.001

Abstract

Abstract: Power devices are one of the weak links in power electronic systems, and their failure has obvious multi-scale characteristics. It is of great significance to build a transient model that can consider the multi-scale characteristics of power devices for device condition monitoring and aging evaluation. Therefore, this paper takes MOSFET as the research object, constructs the field circuit joint simulation model of power device Simulink and COMSOL, and realizes the transient characteristic analysis of devices considering the interaction of device switching information and macro physical information by selecting the on current and on voltage drop as the model interaction information. The average temperature at the chip (shell temperature), the average temperature on the surface of the chip (junction temperature), the conduction voltage drop, the chip resistance and the maximum displacement of the solder layer are analyzed. The results show that the model can effectively consider the switching characteristics of devices and the interaction between macro fields, and lay the foundation for the digital twin model of devices.

Key words: MOSFET, switch circuit, finite element model, cosimulation, transient analysis

CLC Number:

TM73
TN386

GAO Bing, WANG Shuai, ZHONG Yongheng, SUN Yasen, ZHANG Shangchen, ZHOU Jie. Transient Characteristic of MOESFET Based on Cosimulation Simulink with COMSOL[J]. Hunan Electric Power, 2022, 42(5): 1-7.

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